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www.irf.com 1 06/30/05 IRF7832 hexfet power mosfet notes through are on page 10 benefits very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating 100% tested for rg applications synchronous mosfet for notebook processor power synchronous rectifier mosfet for isolated dc-dc converters in networking systems top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 v dss r ds(on) max qg 30v 4.0m @v gs = 10v 34nc absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja j unct i on-to- a m bi ent ??? 50 -55 to + 155 2.5 0.02 1.6 max. 20 16 160 20 30
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.023 ??? v/c r ds(on) static drain-to-source on-resistance ??? 3.1 4.0 m ? ??? 3.7 4.8 v gs(th) gate threshold voltage 1.39 ??? 2.32 v ? v gs(th) gate threshold voltage coefficient ??? 5.7 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 77 ??? ??? s q g total gate charge ??? 34 51 q gs1 pre-vth gate-to-source charge ??? 8.6 ??? q gs2 post-vth gate-to-source charge ??? 2.9 ??? nc q gd gate-to-drain charge ??? 12 ??? q godr gate charge overdrive ??? 10.5 ??? see fig. 16 q sw switch char g e (q gs2 + q gd ) ???14.9??? q oss output charge ??? 23 ??? nc r g gate resistance ??? 1.2 2.4 ? t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 6.7 ??? t d(off) turn-off delay time ??? 21 ??? ns t f fall time ???13??? c iss input capacitance ??? 4310 ??? c oss output capacitance ??? 990 ??? pf c rss reverse transfer capacitance ??? 450 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 3.1 (body diode) a i sm pulsed source current ??? ??? 160 ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 41 62 ns q rr reverse recovery charge ??? 39 59 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??? i d = 16a v gs = 0v v ds = 15v v gs = 4.5v, i d = 16a v gs = 4.5v typ. ??? v ds = v gs , i d = 250a clamped inductive load v ds = 15v, i d = 16a v ds = 24v, v gs = 0v, t j = 125c t j = 25c, i f = 16a, v dd = 10v di/dt = 100a/ s t j = 25c, i s = 16a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 16a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 20a conditions max. 260 16 ? = 1.0mhz
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20s pulse width tj = 25c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 15v 20s pulse width 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.25v 20s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.25v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j, junction temperature (c ) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 16a v gs = 4.5v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050 q g total gate charge (nc) 0 1 2 3 4 5 6 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 16a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( ) v gs = 0v t j = 150c t j = 25c 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec 100sec
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t c , case temperature (c) 0 4 8 12 16 20 24 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature (c) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a
6 www.irf.com fig 13. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.0a 13a bottom 16a fig 16. switching time test circuit fig 17. switching time waveforms fig 12. on-resistance vs. gate voltage d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15. gate charge test circuit fig 14. unclamped inductive test circuit and waveform t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v vgs v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - v gs v ds 90% 10% t d(on) t d(off) t r t f 2 3 4 5 6 7 8 9 10 v gs , gate -to -source voltage (v) 0 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 125c t j = 25c
www.irf.com 7 fig 18.
for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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#' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f ? ? ? ? ? ? + q g v g f () + q oss 2 v in f ? ? ? ? " (

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synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic
www.irf.com 9 so-8 package details so-8 part marking

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 2.0mh, r g = 25 ? , i as = 16a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/05 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel

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